• 专利附录
  • 专利说明
  • 权利要求
  • 类似技术
  • 同族专利
  • 引用文献
  • 法律状态
  • 优先权
    • 专利摘要:
    The invention relates to an assembly comprising: - at least one first element (100) comprising at least a first electrical connection pad (12); at least one second element (200) comprising at least one second electrical connection pad (21); electrical and mechanical interconnection means, characterized in that said electrical and mechanical interconnection means comprise at least: at least one first metallic intermediate interconnection element (13), on the surface of at least the first electrical connection pad; at least one sintered gasket of microparticles or metal nanoparticles stacked with said first intermediate interconnection element; - The melting temperature of said first intermediate interconnect element being greater than the sintering temperature of said microparticles or metal nanoparticles. The invention also relates to a method for manufacturing an assembly of the invention
    公开号:FR3047111A1
    申请号:FR1650583
    申请日:2016-01-26
    公开日:2017-07-28
    发明作者:Rabih Khazaka
    申请人:Commissariat a lEnergie Atomique CEA；Commissariat a lEnergie Atomique et aux Energies Alternatives CEA；
    IPC主号:
    专利说明:

    Assembly comprising mixed interconnect means having interconnect intermediate elements and metal sintered joints and method of manufacture
    The field of the invention is that of the 3D assembly of semiconductors comprising electrical interconnections.
    3D assembly solutions are of great interest for various applications in microelectronics and power electronics. The connection between the chip and the circuit can be achieved by various techniques and in particular by wire wiring commonly referred to as "wire bonding", by ribbons or by "Flip Chip" report type technologies.
    Microcable wiring is the oldest and most common technology in the microelectronics industry for interconnecting a "chip" circuit with its environment (housing, circuit board, hybrid circuit). .), it can be "Wedge bonding" or "Bail bonding": - in the technique of "wedge bonding", a wire, most often aluminum is brought by the tool (called stylet or needle) , then applied to the soldering pad. The connection between the wire and the zone to be connected is effected by combining pressure and ultrasonic vibration. This is a "cold" weld. It is the ultrasonic energy which causes a softening of the wire similar to the effect obtained by a rise in temperature. The wire is then guided by the tool on the second stud and a weld is performed; in the "Bail Bonding" technique, for example a gold wire passes through a heated capillary (100 to 200 ° C.) The ball formed at the outlet of the capillary (by the discharge of a capacitor or by a flame The capillary is then moved to perform the second weld, the wire is torn off by the capillary, a new ball is reformed and a new connection can be made.
    The advantages of "Flip Chip" assemblies are numerous like the strong integration, the low parasitic inductance, and a better evacuation of the thermal flux generated by the semiconductors.
    The realization of interconnections with welded "bumps" is one of the most used techniques in assembly "Flip Chip", and consists of depositing solder paste on connection pads commonly called by the man of the pad art located on the circuit or on the electronic component then to align the component and the circuit to match each circuit pad to the semiconductor pad.
    The circuit and the substrate are brought into contact and a brazing process is performed to ensure electrical and mechanical contact between the semiconductor and the substrate. This technique is not practical for all applications and may have several disadvantages such as the need for specific metal layers on the pads to be connected involving additional processes and therefore high costs, the need for a temperature at least equal to that fusion of the solder, and the difficulty of catching a difference of several pm or several tens of pm in height that may be present on some components. In addition, the brazing process induces a risk of non-negligible short circuit when the distances between electrodes are low following the flow of the solder during its fusion.
    Another alternative, such as direct sintering of nanoparticles, can be used as described in US Pat. No. 8,257,795 B2 "Nanoscale metal paste for interconnect and method of use". It consists of replacing the connection commonly referred to as "soldering bump" of the soldering "bump" technique by a nanoparticle paste (Ag, Au or Cu) to be sintered. This technology also has disadvantages such as the need for a suitable metallization of the pads (Au or Ag but not compatible with the AI very often used as finishing chips). A second disadvantage of this technique is the low joint height (generally 10 microns) which can limit the thermomechanical reliability of the joints as well as the choice of underfills (encapsulating materials) which must fill the gaps (most often by capillarity). Interconnection by "stud bump" consists of using a bail bonding machine.
    More specifically, a metal ball is attached to the stud by using thermosonic or thermo-compression techniques. The wire is cut just after the ball forming the form of "stud bump" still called intermediate interconnect element. Then the "stud bumps" formed on the connection pad of the semiconductor or on that of the circuit are attached to the other connection pad by thermo-compression A disadvantage of this technique is the possibility of having problems with adhesion between the metallization and the "stud bump" during the thermocompression due to the absence or the small thickness of the necessary metal layer. US Patent 2002/0093108 A1 "FLIP CHIP PAC K AG ED SEMICONDUCTOR DEVICE HAVING DUAL STUD BUMPS AND METHOD OF FORMING SAME >> avoids this problem by performing" stud bumps "side circuit and semiconductors and coming heat-compress "stud bump" on "stud bump" after. The second disadvantage is the need for pressure and high temperature to assemble by thermo-compression which is not compatible with the pressure-sensitive components. In addition, this assembly technique does not make up for a difference in height of several pm or several tens of pm may be present on some components following the manufacturing process.
    The present invention aims to solve one or more of the disadvantages of the various techniques mentioned above. It consists in producing mixed electrical and mechanical interconnections comprising so-called intermediate interconnection elements that may correspond, for example, to "stud bumps" combined with sintered joints obtained for example from paste or film of microparticles or metal nanoparticles. .
    More specifically, the subject of the present invention is an assembly comprising: at least one first element comprising at least one first electrical connection pad; at least one second element comprising at least a second electrical connection pad; electrical and mechanical interconnection means characterized in that said electrical and mechanical interconnection means comprise: at least one first interconnection metal intermediate element, on the surface of at least the first electrical connection pad; at least one sintered gasket of microparticles or metal nanoparticles stacked with said first intermediate interconnection element; - The melting temperature of said first intermediate interconnection element being greater than the sintering temperature of said microparticles or said metal nanoparticles.
    One of the advantages of the present invention lies in the fact that the intermediate interconnection elements are previously defined, and have a temperature resistance which is not impaired by the sintering of the microparticles or metal nanoparticles, making it possible to carry out interconnections of heterogeneous stacked elements that provide the desired features.
    According to variants of the invention, the assembly further comprises at least a second intermediate metallic interconnection element, on the surface of at least a second electrical connection pad.
    According to variants of the invention, at least one of the elements comprises a semiconductor component.
    According to variants of the invention, at least one of the elements comprises an electronic circuit.
    According to variants of the invention, at least one of the elements is a ceramic substrate which may be Al 2 O 3 or Si 3 N 4 or AlN and may comprise at least one metal layer on one of its faces.
    According to variants of the invention, the at least first connection pad and / or the at least second connection pad is (are) silver or gold or copper.
    According to variants of the invention, the at least second connection pad is made of aluminum, the at least first connection pad being made of silver or gold or copper. Indeed, this allows the realization of the necessary sintering operation that can not be performed on an aluminum connection pad.
    In the case of an assembly comprising at least a first interconnection intermediate element and at least a second interconnection intermediate element, thus isolating at least one first connection pad of at least one sintered seal and at least one second connection pad of said sintered joint, it is possible to have aluminum connection pads at at least one of the two elements. The assembly may thus comprise at least one second aluminum connection pad, and / or at least one first aluminum connection pad.
    According to variants of the invention, the intermediate interconnect element is a pressed metal ball.
    According to variants of the invention, the sintered seal is made of silver or gold or copper or metal alloy comprising two of the aforementioned metals.
    According to variants of the invention, the sintered seal has a thickness of the order of a few microns, which can be between 1 micron and several tens of microns.
    According to variants of the invention, the intermediate interconnection element has a thickness of the order of several tens of microns, which can be between 10 microns and 100 microns.
    According to variants of the invention, the assembly comprising a plurality of intermediate interconnection elements, at least a part of the interconnections comprising said joints and said intermediate interconnection elements have different heights of joints and / or interconnection elements. . The invention also relates to a method of manufacturing an assembly comprising: - at least a first element comprising at least a first electrical connection pad; at least one second element comprising at least a second electrical connection pad; electrical and mechanical interconnection means comprising at least a first metallic interconnection intermediate element, said method comprising the following steps: the production of at least one first metal interconnection intermediate element on at least one first connection; the use of at least one paste or film of metal microparticles or nanoparticles; - A sintering operation of said paste or said film of metal microparticles or nanoparticles, so as to produce a sintered seal stacked with at least said intermediate interconnect element; - The melting temperature of said first intermediate interconnection element being greater than the sintering temperature of said microparticles or metal nanoparticles.
    According to variants of the invention, the method further comprises producing at least one second intermediate metal interconnection element on at least one second connection pad.
    According to variants of the invention, the sintering operation is carried out at a low pressure of less than 100 g / cm 2.
    According to variants of the invention, the method further comprises the application of a first pressure on at least said first intermediate interconnect element, before the sintering operation.
    According to variants of the invention, the intermediate interconnection element is formed on the surface of at least one electrical connection pad from a wire by forming a metal ball made integral with said electrical connection pad by a thermosonic technique or by thermocompression.
    According to variants of the invention, the intermediate element is a metal abutment, said metallic abutment (which may be made of copper) may be produced according to conventional microelectronics methods using resin photolithography and electro-deposition of copper for to form metal pillars on substrates. The cutting of the substrate to have single pieces (chips) can be done generally after obtaining the pillars.
    According to variants of the invention, the sintering operation is carried out at a second pressure lower than said first pressure.
    According to variants of the invention, the method comprises the following steps: - the realization of at least a first electrical interconnection element on the surface of at least a first electrical connection pad; depositing a paste of microparticles or metal nanoparticles on the surface of at least said first intermediate interconnection element; positioning at least a second electrical connection pad opposite at least said first electrical connection pad to form an assembly comprising at least the first element and the second element; - A sintering operation of said paste so as to form at least one sintered metal seal.
    According to variants of the invention, the method comprises heating and pressing said first intermediate interconnection element brought into contact with a dry film of microparticles or metal nanoparticles which can be on the surface of a flexible support, leading to the penetrating a portion of said first intermediate element into said metal dry film, breaking said dry film and forming at least one metal dry film element of microparticles or nanoparticles on the surface of at least said intermediate element interconnection. The invention also relates to an assembly obtained according to the manufacturing method of the invention. The invention will be better understood and other advantages will become apparent on reading the following description, which is given in a nonlimiting manner and by virtue of the appended figures in which: FIGS. 1a to 1f illustrate the main steps of a first example of a method of manufacturing an assembly according to the invention; FIGS. 2a to 2f illustrate the main steps of a second exemplary method of manufacturing a second assembly variant according to the invention, comprising second intermediate interconnection elements; FIGS. 3a to 3f illustrate the main steps of a third example of a method of manufacturing an assembly according to the invention using a dry film of metal nanoparticles; FIGS. 4a to 4e illustrate an example of a method with the production of metal pillars; FIGS. 5a and 5b illustrate the electrical characteristics of a Gallium nitride HEMT component assembled into a "flip chip" on a DBC type circuit.
    The present invention relates to an assembly and a method of manufacturing an assembly for making electrical interconnections that can operate at temperatures above 300 ° C with a process temperature profile of less than 250 ° C and very low pressures <100 g / cm2.
    It also makes it possible to compensate differences in height of intermediate elements of electrical interconnection up to several tens of pm.
    It consists first of all in producing at least one intermediate element of electrical interconnection. The intermediate electrical connection element can typically be an element corresponding to a "stup bump", on a connection pad of a first element that can typically be a circuit or on the connection pad of a second element that can typically comprise one or more semiconductor components or both, the intermediate element being obtainable by thermosonic or thermo-compression technique.
    Pressure can then be applied to the intermediate connection element of the "stud bump" type to deform it and in the case of several intermediate interconnection elements to make their height uniform.
    The intermediate interconnection elements may be covered by the paste of microparticles or metal nanoparticles by dispensing (controlled quantity without the use of masks).
    The pads of the semiconductors are aligned with the corresponding circuit pads and a low pressure (<100g / cm2) is applied to ensure contact between the pads. A temperature cycle for sintering the nanoparticle paste is then applied. At the end of the process, an electrical and mechanical interconnection is provided between the semiconductor and the circuit.
    This interconnection technique has the following advantages: - low pressure for sensitive components (compared to thermo-compression); - a high electrical and thermal conductivity compared to conventional solder; the possibility of an assembly without flow and without mask allowing a simplicity of the manufacturing process; - A height of the joint adjustable by the "stud bumps" and the dough allows use of a wider variety of encapsulating materials because of the simplicity of filling voids with higher heights (encapsulant having larger viscosities and loaded with larger particles) and minimization of thermomechanical stresses); a compatibility with different finishes of the pads used in microelectronics (Al, Au, Ag, Cu) for the interface with the intermediate elements of interconnect which can be of the "stud bumps" type and finishes preferably in Au or Ag for the interface with Ag nanoparticle paste; compensation of a height difference of several tens of μm with the intermediate interconnection elements (by using bonding wires of different thicknesses, or by applying different pressures on the interconnection elements). Differences of heights lower than ten pm can be compensated by the paste of metallic nanoparticles; - A small risk of short circuit between different connection pads near the order of ten pm (compared to solder during melting) and possibility of checking the electrical functionality (presence of short circuit or open circuit) before the final assembly since the paste solidifies during the assembly process unlike the solder.
    A first example of a method for manufacturing a first assembly variant according to the invention is described below:
    First step illustrated in FIG. 1a: From a first element of the DBC substrate type, 100 comprising a ceramic substrate 11, and a lower metal layer 10 and connection pads 12, thermosonic interconnection intermediate elements 13 are produced. .
    The connection pads are made with a Ni / Au topcoat (2 μm / 50 nm). With the aid of a "lease bonding" machine using a thermosonic technique known to those skilled in the art, the intermediate interconnection elements 13 are produced.
    The diameter of the Au wire used is 38 μm. The minimum size of the connection pads 12 on which the intermediate interconnection elements will be made must preferably be at least 2 times greater than the diameter of the bonding wires.
    A matrix of 7 × 7 interconnecting intermediate elements is made with a distance of 300 μm between two consecutive interconnecting intermediate elements.
    The bonding conditions called "bonding" (substrate temperature, ultrasonic power and time, applied pressure) are optimized to obtain a shear strength of 80 g / intermediate interconnection element.
    Second step illustrated in Figure 1b:
    The height of the intermediate interconnect elements is standardized by applying a force of 100g / interconnection intermediate element by a flat and rigid surface (glass or silicon). This force is sufficient to deform the intermediate interconnection elements and to obtain an interconnect intermediate element height of 40 μm. The diameter of the intermediate interconnect element pressed is about 120 μm.
    Third step illustrated in Figure 1c:
    A paste of silver nanoparticles is used to attach the interconnect intermediate elements made on the DBC circuit to the finishing metal of the chip corresponding to the second element to be assembled (the finishing metal may typically be gold). A controlled quantity of the nanoparticle paste 14 is deposited on the interconnection intermediate elements by means of a manual dispenser. The dispensing process can be done automatically through automatic dispensing machines on the market (eg ASYMTEK Quantum Serial).
    Fourth step illustrated in Figure 1d:
    A silicon chip 200 comprising a component 20 and a Ni / Au finish layer 21 is then reported in the "Flip chip" technique on the matrix of the circuit.
    Step 5 illustrated in Figure 1e:
    A pressure of 100 g / cm 2 is applied on the chip to ensure contact between the different pads 21, the dough elements 14 previously stacked with the intermediate interconnection elements 13 made on the surface of the connection pads 12 to achieve the assembly of the circuit 100 and the chip 200.
    Sixth step illustrated in Figure 1f:
    A sintering step of the paste containing silver nanoparticles is carried out by rising at 250 ° C. under air for 20 minutes with a controlled rise ramp (5 ° C./min). Following this step, all the organic materials forming the paste (solvent, binder, dispersant) are evaporated and the final seal is formed just of silver. At the end of the process, a mechanical rigidity test in shear is carried out to test the mechanical rigidity of the joint. A force of 3 kg (average of 3 tests) is required to pull the chip, which amounts to an average force of 61g / interconnect stack. The seal is detached at the interface between the sintered seal and the finish of the chip which is the most critical interface in the present configuration. Typically the sintered seal may have a thickness of between about 1 μm and 10 μm.
    A second example of a method of manufacturing a second assembly variant comprising first and second intermediate electrical and mechanical interconnection elements according to the invention is described below:
    First step illustrated in FIG. 2a: Starting from a first element of the DBC substrate type, 100 comprising a ceramic substrate 11, and a lower metal layer 10 and connection pads 12, first interconnect intermediate elements 13 are produced by thermosonic.
    In parallel, a second silicon chip-type element 200 comprising a component 20 and a Ni / Au-finish layer 21, second intermediate thermosonic interconnection elements 22 is also produced.
    Second step illustrated in Figure 2b:
    The height of the intermediate interconnection elements 13 and 22 is standardized by applying a force of 100 g / interconnection intermediate element by a flat and rigid surface (glass or silicon). This force is sufficient to deform the intermediate interconnection elements and to obtain an interconnect intermediate element height of 40 μm. The diameter of the intermediate interconnect element pressed is about 120 μm.
    Third step illustrated in Figure 2c:
    A paste of silver nanoparticles is used to attach the intermediate interconnection elements made on the DBC circuit to the intermediate interconnection elements of the chip corresponding to the second element to be assembled (the finishing metal can typically be gold). . A controlled quantity of the nanoparticle paste 14 is deposited on the interconnection intermediate elements 13 by means of a manual dispenser. The dispensing process can be done automatically through automatic dispensing machines on the market (eg ASYMTEK Quantum Serial).
    Fourth step illustrated in Figure 2d:
    The silicon chip 200 comprising a component 20, a Ni / Au finish layer 21, intermediate interconnection elements 22, is then reported in the "Flip chip" technique on the matrix of the circuit 100.
    Step 5 illustrated in Figure 2e:
    A pressure of 100 g / cm 2 is applied on the chip to ensure contact between the different pads 21, the intermediate interconnection elements 22, the dough elements 14 previously stacked with intermediate interconnection elements 13 made on the surface of the pads connection 12 for assembling the circuit 100 and the chip 200.
    Sixth step illustrated in Figure 2f:
    A sintering step of the paste containing silver nanoparticles is carried out by rising at 250 ° C. under air for 20 minutes with a controlled rise ramp (5 ° C./min). Following this step, all the organic materials forming the paste (solvent, binder, dispersant) are evaporated and the final seal is formed just of silver.
    A third example of a method of manufacturing an assembly comprising first intermediate electrical and mechanical interconnection elements according to the invention is described below:
    The first and second process steps illustrated in FIGS. 3a and 3b are identical to those of the first exemplary method (illustrated in FIGS. 1a and 1b).
    Third step illustrated in FIG. 3c and in FIG. 3d:
    The first interconnection elements 13 on the surface of the first metal studs 12 are heated and then pressed onto a dry metal film of microparticles or nanoparticles 31 which is placed on a flexible material forming the support 30. The temperature is of the order of 100 ° C to activate the adhesion during the contact with the film. The height of the intermediate interconnect elements is chosen greater than the depth of penetration into the film, so that the connection pads 12 are not in contact with said film.
    The first intermediate interconnection elements penetrate several μm into the film and the surfaces of the dry film which are in contact with the interconnection element can separate from the rest of the film, creating dry film elements 31 which adhere to the intermediate elements. interconnection, (to do so, the adhesive force between the first element and the film is greater than that existing between the film and the flexible support), as shown in Figure 3d. The film is thus somehow stamped on the interconnection elements.
    Fourth step illustrated in Figure 3e:
    A silicon chip comprising a component 20 and a Ni / Au finish layer 21 is then reported in the "Flip chip" technique on the matrix of the circuit.
    Fifth step and sixth step illustrated in Figure 3f:
    A pressure of 10 kg / cm 2 is applied on the chip to ensure contact between the different pads 21, the film elements 31 previously stacked with the intermediate interconnection elements 13 made on the surface of the connection pads 12 to achieve the assembly of the circuit 100 and the chip 200. A sintering step of the film containing silver nanoparticles is carried out by rising at 250 ° C under air for 20 minutes with a controlled rise ramp (5 ° C / min).
    A fourth example of a method of manufacturing an assembly comprising first intermediate elements of electrical and mechanical interconnect type pillars, according to the invention is described below:
    First step illustrated in Figure 4a:
    On the surface of a silicon chip comprising a component 20 and a layer, a Ni / Au 21 finish and copper pillars 22 are produced by conventional microelectronics methods using photolithography of resins and electro-deposition of copper. to form metal pillars on substrates. The cutting of the substrate to have single pieces (chips) can be done generally after obtaining the pillars.
    Second step illustrated in Figure 4b:
    Exemplary prior piers 22 are produced by depositing nanoparticle paste. A controlled quantity of the metal nanoparticle paste 14 is deposited on the interconnection intermediate elements by means of a manual dispenser, so as to form the elements 23 of metal paste to be sintered.
    Third step illustrated in FIG. 4c:
    The previous set elaborated and described previously is reported on a DBC substrate comprising a ceramic substrate 11, and a lower metal layer 10 and connection pads 12.
    Fourth step illustrated in Figure 4d:
    A pressure of 100 g / cm 2 is applied on the chip to ensure contact between the different pads 21, the intermediate interconnection elements 22, the dough elements 23 stacked on the connection pads 12 to achieve circuit assembly and of the chip.
    Step 5 illustrated in Figure 4e:
    A sintering step of the paste containing silver nanoparticles is carried out by rising at 250 ° C. under air for 20 minutes with a controlled rise ramp (5 ° C./min). Following this step, all the organic materials forming the paste (solvent, binder, dispersant) are evaporated and the final seal is formed just of silver.
    The Applicant has carried out tests to assemble a GaN HEMT transistor component (High Electron Mobility Transistor), on a "DBC" type substrate obtained according to the first example of a method of manufacturing an assembly illustrated in FIG. at 1 f.
    The tests conducted after completion of the assembly according to the invention have proved the quality of the assembly, the transient being quite functional.
    The component has a gate height 10 μm lower than the drain and source.
    It has thus been possible to make interconnections with elements having adapted and different heights.
    The same interconnection is performed and electrical tests have shown a fully functional transistor as shown in Figures 5a and 5b. FIG. 5a shows the characteristics of the current Ids as a function of the voltage Vds (with the following references: d for drain and s for source) with a pulse time of 100 ps, of a GaN transistor with gate-source voltages Vgs between -4V (transistor off) and 2V, with no increase of 1V. FIG. 5b shows the variation of the current Ids as a function of the voltage Vgs for a drain-source voltage Vds of 1V showing the currents Ids when the transistor is off and open.
    Compared to conventional solder or conductive glue, the sintering of silver nanoparticles has several advantages such as better thermal conductivity (more than 4 times greater than that achieved with conventional solders), a process temperature below 300 ° C and an operating temperature above 300 ° C (in the case of brazing, the process temperature is higher than the operating temperature). The technique used makes it possible to avoid the short circuits that can take place during the fusion of the solder.
    In addition, the porous joint between the intermediate interconnection element and the semiconductor stud makes it possible to better deal with the mechanical stresses induced by the difference in the coefficients of thermal expansion between the components assembled during the thermal cycles.
    It should be noted that the height of the intermediate interconnect elements can be controlled and standardized by applying a sufficient pressure to deform them.
    Different heights of interconnect intermediate elements can be envisaged on the same substrate by: - realizing a first series with the lower elements and then pressing them with a suitable pressure; - by making a series of higher elements then pressing them.
    This height of the intermediate interconnection elements can be controlled by the diameter of the wires, the deformation pressure exerted or through the realization of "multi intermediate interconnect elements. These intermediate elements of multi-height interconnection are necessary if the surface profile has a height variation of several tens of pm which can not be compensated by the dough alone.
    In the present invention intermediate interconnect elements "stud bumps" Au can be realized. Intermediate interconnection elements may also be made using other metals or alloys (Cu, Ag, Ag alloy). The intermediate interconnection elements can be pressed to have a controlled height with a variation less than the pm. However, it is possible not to press the formed "stud bumps", which can generate a height variation of about 1 to 5 pm.
    The paste of microparticles or nanoparticles can be silver or gold or copper or copper / silver alloy.
    It should be noted that in the case of sintering microparticles, it is appropriate to use higher pressures, which can typically be greater than 20 MPa.
    Deposition of the nanoparticle paste can be achieved using a dispenser. Other dough deposition solutions may be envisaged, such as screen printing or direct imprint printing, which makes it possible to have the dough in well-localized areas.
    权利要求:
    Claims (22)
    [1" id="c-fr-0001]
    An assembly comprising: - at least one first element (100) comprising at least a first electrical connection pad (12); at least one second element (200) comprising at least one second electrical connection pad (21); electrical and mechanical interconnection means, characterized in that said electrical and mechanical interconnection means comprise at least: at least one first metallic intermediate interconnection element (13), on the surface of at least the first electrical connection pad; at least one sintered seal (14) of microparticles or metal nanoparticles stacked with said first intermediate interconnection element (13); - The melting temperature of said first intermediate interconnection element being greater than the sintering temperature of said microparticles or said metal nanoparticles.
    [2" id="c-fr-0002]
    2. An assembly according to claim 1, further comprising at least a second intermediate metallic interconnection element (13), on the surface of at least the second electrical connection pad.
    [3" id="c-fr-0003]
    3. Assembly according to one of claims 1 or 2, wherein at least one of the elements comprises a semiconductor component.
    [4" id="c-fr-0004]
    4. Assembly according to one of claims 1 to 3, wherein at least one of the elements comprises an electronic circuit.
    [5" id="c-fr-0005]
    5. Assembly according to one of claims 1 to 3, wherein at least one of the elements is a ceramic substrate that can be Al2O3 or S13N4 or AlN and may comprise at least one metal layer on one of its faces.
    [6" id="c-fr-0006]
    6. Assembly according to one of claims 1 to 5, wherein said connection pad is silver or gold or copper.
    [7" id="c-fr-0007]
    7. Assembly according to claim 2 wherein, the at least second connection pad is aluminum, and / or the at least first connection pad is aluminum.
    [8" id="c-fr-0008]
    8. Assembly according to one of claims 1 to 7, wherein the intermediate interconnect element is a metal ball pressed.
    [9" id="c-fr-0009]
    9. Assembly according to one of claims 1 to 8, wherein the sintered seal is silver or gold or copper or metal alloy comprising two of the aforementioned metals.
    [10" id="c-fr-0010]
    10. Assembly according to one of claims 1 to 9, wherein the sintered seal has a thickness of the order of a few microns, which can be between 1 micron and a few tens of microns.
    [11" id="c-fr-0011]
    11. Assembly according to one of claims 1 to 10, characterized in that the intermediate interconnection element has a thickness of the order of several tens of microns, which can be between 10 microns and 100 microns.
    [12" id="c-fr-0012]
    12. Assembly according to one of claims 1 to 11, comprising a plurality of intermediate interconnection elements and wherein at least a portion of the interconnections comprising said joints and said intermediate interconnection elements have different heights of joints and / or d interconnection elements.
    [13" id="c-fr-0013]
    13. A method of manufacturing an assembly comprising: - at least a first element (100) comprising at least a first electrical connection pad (12); at least one second element (200) comprising at least one second electrical connection pad (21); electrical interconnection means and; said method comprising the following steps: - producing at least one first metal interconnection intermediate element (13) on at least one first connection pad; the use of at least one paste or film of metal microparticles or nanoparticles; - A sintering operation of said paste or said film of metal microparticles or nanoparticles, so as to produce a sintered seal stacked with at least said intermediate interconnect element; - The melting temperature of said first intermediate interconnect element being greater than the sintering temperature of said microparticles or metal nanoparticles.
    [14" id="c-fr-0014]
    14. The method of claim 13, further comprising producing at least a second intermediate metallic interconnection element on at least a second connection pad.
    [15" id="c-fr-0015]
    15. Method according to one of claims 13 or 14, wherein the sintering operation is performed at a low pressure less than 100 g / cm2.
    [16" id="c-fr-0016]
    The method of one of claims 13 to 15, further comprising applying a first pressure to at least said first interconnect intermediate member prior to the sintering operation.
    [17" id="c-fr-0017]
    17. Method according to one of claims 13 to 16, wherein the intermediate interconnect element is formed on the surface of at least one electrical connection pad, from a wire forming a metal ball rendered secured to said electrical connection pad by a thermosonic technique or by thermo-compression.
    [18" id="c-fr-0018]
    18. Interconnection method according to one of claims 13 to 16, wherein the intermediate element is a metal pillar, said metal pillar being made by resin photolithography and electro-deposition of a metal.
    [19" id="c-fr-0019]
    19. Method according to one of claims 16 to 18, wherein the sintering operation is performed at a second pressure lower than said first pressure.
    [20" id="c-fr-0020]
    20. Method according to one of claims 13 to 19, comprising the following steps: - the realization of at least a first electrical interconnection element on the surface of at least a first electrical connection pad; depositing a paste of microparticles or metal nanoparticles on the surface of at least said first intermediate interconnection element; positioning at least a second electrical connection pad opposite at least said first electrical connection pad to form an assembly comprising at least the first element and the second element; - A sintering operation of said paste so as to form at least one sintered metal seal.
    [21" id="c-fr-0021]
    21. Method according to one of claims 13 to 19, comprising heating and pressing of said first intermediate interconnection element brought into contact with a dry film of microparticles or metal nanoparticles that can be on the surface of a flexible support, leading to penetration of a portion of said first intermediate element into said metal film, breaking of said dry film and forming at least one metal dry film element of microparticles or metal nanoparticles on the surface of at least said intermediate interconnection element.
    [22" id="c-fr-0022]
    22. Assembly obtained according to the manufacturing method of one of claims 13 to 21.
    类似技术:
    公开号 | 公开日 | 专利标题
    FR3047111A1|2017-07-28|ASSEMBLY COMPRISING MIXED INTERCONNECT MEANS COMPRISING INTERMEDIATE INTERCONNECTION ELEMENTS AND METAL SINTERED JOINTS AND METHOD FOR MANUFACTURING THE SAME
    US8546185B2|2013-10-01|Method for manufacturing semiconductor device
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    同族专利:
    公开号 | 公开日
    US11011490B2|2021-05-18|
    WO2017129687A1|2017-08-03|
    US20180374813A1|2018-12-27|
    EP3408863A1|2018-12-05|
    FR3047111B1|2018-03-23|
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    法律状态:
    2017-01-31| PLFP| Fee payment|Year of fee payment: 2 |
    2017-07-28| PLSC| Publication of the preliminary search report|Effective date: 20170728 |
    2018-01-31| PLFP| Fee payment|Year of fee payment: 3 |
    2020-01-30| PLFP| Fee payment|Year of fee payment: 5 |
    2021-01-28| PLFP| Fee payment|Year of fee payment: 6 |
    2022-01-31| PLFP| Fee payment|Year of fee payment: 7 |
    优先权:
    申请号 | 申请日 | 专利标题
    FR1650583|2016-01-26|
    FR1650583A|FR3047111B1|2016-01-26|2016-01-26|ASSEMBLY COMPRISING MIXED INTERCONNECT MEANS COMPRISING INTERMEDIATE INTERCONNECTION ELEMENTS AND METAL SINTERED JOINTS AND METHOD OF MANUFACTURE|FR1650583A| FR3047111B1|2016-01-26|2016-01-26|ASSEMBLY COMPRISING MIXED INTERCONNECT MEANS COMPRISING INTERMEDIATE INTERCONNECTION ELEMENTS AND METAL SINTERED JOINTS AND METHOD OF MANUFACTURE|
    PCT/EP2017/051667| WO2017129687A1|2016-01-26|2017-01-26|Assembly comprising hybrid interconnecting means including intermediate interconnecting elements and sintered metal joints, and manufacturing process|
    EP17701352.1A| EP3408863A1|2016-01-26|2017-01-26|Assembly comprising hybrid interconnecting means including intermediate interconnecting elements and sintered metal joints, and manufacturing process|
    US16/072,867| US11011490B2|2016-01-26|2017-01-26|Assembly comprising hybrid interconnecting means including intermediate interconnecting elements and sintered metal joints, and manufacturing process|
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